DocumentCode :
877595
Title :
SEB Characterization of Commercial Power MOSFETs With Backside Laser and Heavy Ions of Different Ranges
Author :
Luu, Aurore ; Miller, Florent ; Poirot, Patrick ; Gaillard, Rémi ; Buard, Nadine ; Carrière, Thierry ; Austin, Patrick ; Bafleur, Marise ; Sarrab, Gérard
Author_Institution :
Eur. Aeronaut. Defence & Space Co., Suresnes
Volume :
55
Issue :
4
fYear :
2008
Firstpage :
2166
Lastpage :
2173
Abstract :
This paper presents a validation of the methodology based upon backside laser irradiations to characterize the sensitivity of power devices towards single-event burnout. This is done thanks to high-energy heavy ion testing and device simulations.
Keywords :
power MOSFET; backside laser irradiations; device simulations; high-energy heavy ion testing; power MOSFETs; Analytical models; Application software; Guidelines; MOSFETs; Manufacturing; Neutrons; Power lasers; Protons; Software testing; Strips; Commercial power MOSFETs; heavy ion tests; laser tests; single-event burnout (SEB); software simulations;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2008.921934
Filename :
4636889
Link To Document :
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