• DocumentCode
    877636
  • Title

    Comparison Between Point Defect Generation by \\gamma -rays in Bulk and Fibre Samples of High Purity Amorphous

  • Author

    Brichard, Benoit ; Agnello, Simonpietro ; Nuccio, Laura ; Dusseau, Laurent

  • Author_Institution
    SCK-CEN, Mol
  • Volume
    55
  • Issue
    4
  • fYear
    2008
  • Firstpage
    2121
  • Lastpage
    2125
  • Abstract
    We compare the E ´ , H(I) and Si-ODC(II) contents in a low-OH high-purity a-SiO2 both in bulk and fibre forms. The investigation includes the effects of hydrogen loading of the fibre. We found that the H(I) centre appears during irradiation and that its concentration tends to increase with the dose in fibers impregnated with molecular hydrogen. For the hydrogen-treated fibers, no experimental repeatability could be found in the measurements of E ´ and Si-ODC(II) although an acceptable agreement was still found in non-hydrogenated samples. This result suggests a possible complex reaction mechanisms under gamma radiation when the glass has a hydrogen excess.
  • Keywords
    amorphous state; gamma-ray effects; optical fibres; point defects; silicon compounds; SiO2; gamma radiation; molecular hydrogen; point defect generation; Amorphous materials; Charge carrier processes; Electron optics; Hydrogen; Ionizing radiation; Optical devices; Optical fibers; Optical materials; Paramagnetic resonance; Silicon compounds; Fibre; gamma; hydrogen; point defects; silica;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2008.2001706
  • Filename
    4636894