DocumentCode :
877636
Title :
Comparison Between Point Defect Generation by \\gamma -rays in Bulk and Fibre Samples of High Purity Amorphous
Author :
Brichard, Benoit ; Agnello, Simonpietro ; Nuccio, Laura ; Dusseau, Laurent
Author_Institution :
SCK-CEN, Mol
Volume :
55
Issue :
4
fYear :
2008
Firstpage :
2121
Lastpage :
2125
Abstract :
We compare the E ´ , H(I) and Si-ODC(II) contents in a low-OH high-purity a-SiO2 both in bulk and fibre forms. The investigation includes the effects of hydrogen loading of the fibre. We found that the H(I) centre appears during irradiation and that its concentration tends to increase with the dose in fibers impregnated with molecular hydrogen. For the hydrogen-treated fibers, no experimental repeatability could be found in the measurements of E ´ and Si-ODC(II) although an acceptable agreement was still found in non-hydrogenated samples. This result suggests a possible complex reaction mechanisms under gamma radiation when the glass has a hydrogen excess.
Keywords :
amorphous state; gamma-ray effects; optical fibres; point defects; silicon compounds; SiO2; gamma radiation; molecular hydrogen; point defect generation; Amorphous materials; Charge carrier processes; Electron optics; Hydrogen; Ionizing radiation; Optical devices; Optical fibers; Optical materials; Paramagnetic resonance; Silicon compounds; Fibre; gamma; hydrogen; point defects; silica;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2008.2001706
Filename :
4636894
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