Title :
Wire bonding-towards 6-σ yield and fine pitch
Author :
Harman, George G.
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
fDate :
12/1/1992 12:00:00 AM
Abstract :
The problems as well as the solutions required to wire bond high lead count chips to their packages at the required high yields are described. The elements for achieving 6-σ wire bond yields are the choice of metallization on the chip as well as on the package; an appropriate cleaning procedure (which in some circumstances may be at the wafer level) and/or special storage and shipping containers; factorial bonder setup and proper bond test methods uniform, reproducible wire and bonding machine characteristics; and both the chip bond pads and the package pads designed with full awareness of the limitations and tolerances of the chosen bonder and its bonding method. Wafer testing probe cards currently limit the minimum wire bond pad pitch on high end devices to about 100 μm. However, 75-μm pitch wedge bonding can be performed with current (modified) autobonders, and 40-μm pitch bonding has been reported
Keywords :
VLSI; lead bonding; multichip modules; 100 to 40 micron; 6-σ yield; FPT; MCM; autobonders; bond test methods; bond yields; bonding machine characteristics; chip bond pads; choice of metallization; cleaning procedure; factorial bonder setup; fine pitch; fine-pitch technology; high end devices; high yields; limitations; multichip modules; package pads; reproducibility; shipping containers; tolerances; wedge bonding; wire bond high lead count chips; wire bond pad pitch; Lead compounds; Manufacturing; Packaging machines; Production; Semiconductor device manufacture; Semiconductor device packaging; Testing; Wafer bonding; Wafer scale integration; Wire;
Journal_Title :
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
