DocumentCode :
87768
Title :
A Novel Device Geometry for Vortex Random Access Memories
Author :
Qi Shao ; Pui Sze Ku ; Ruotolo, Antonio
Author_Institution :
Dept. of Phys. & Mate.rials Sci., City Univ. of Hong Kong SAR, Hong Kong, China
Volume :
50
Issue :
7
fYear :
2014
fDate :
Jul-14
Firstpage :
1
Lastpage :
4
Abstract :
The vortex state is one of the equilibrium configurations of soft magnetic materials and occurs in thin ferromagnetic square and disk-shaped elements of sub-micrometer size. The vortex state has a specific excitation mode: the in-plane gyration of the vortex structure about its equilibrium position. This mode can be electrically excited by a spin-polarized current. When the gyrating vortex reaches a critical velocity, a switching of the vortex core can occur. We show here how to increase the vortex velocity to reduce the switching current. The vortex core can be switched back by reversing the current direction.
Keywords :
ferromagnetic materials; magnetic storage; random-access storage; device geometry; disk shaped elements; gyrating vortex; in-plane gyration; soft magnetic material; spin polarized current; submicrometer size; thin ferromagnetic square; vortex random access memories; vortex state; Geometry; Magnetic cores; Magnetic domain walls; Magnetic domains; Magnetic switching; Orbits; Switches; Magnetic memories; magnetic vortices; spin transfer torque;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2013.2293701
Filename :
6851272
Link To Document :
بازگشت