Title :
Design of precision capacitors for analog applications
Author :
St.Onge, S.A. ; Franz, Sheila G. ; Puttlitz, Albert F. ; Kalinoski, Annette ; Johnson, Brian E. ; El-Kareh, Badih
Author_Institution :
IBM Technol. Products, Essex Junction, VT, USA
fDate :
12/1/1992 12:00:00 AM
Abstract :
Two capacitors incorporated in a baseline BiCMOS technology without added process complexity are described and analyzed. The first is formed between degenerately doped polysilicon and silicon. The second is formed between two degenerately doped polysilicon layers. In both structures, the insulator is a deposited or grown oxide. The sensitivity of the capacitor voltage coefficient to oxide thickness and surface dopant concentration is discussed theoretically and compared to measured data. The two capacitors are optimized to exhibit very low voltage coefficients
Keywords :
BiCMOS integrated circuits; analogue processing circuits; capacitors; integrated circuit technology; semiconductor-insulator-semiconductor structures; BiCMOS technology; Si-SiO2-Si capacitors; analog applications; capacitance ratio precision; capacitor voltage coefficient; oxide thickness; precision capacitors; surface dopant concentration; voltage coefficient of capacitance; BiCMOS integrated circuits; CMOS technology; Capacitance; Dielectrics; Linearity; Low voltage; MOS capacitors; Silicon compounds; Silicon on insulator technology; Temperature;
Journal_Title :
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
