• DocumentCode
    877758
  • Title

    Digital signal transfer in charge-transfer devices

  • Author

    Heller, L.G.

  • Volume
    8
  • Issue
    2
  • fYear
    1973
  • fDate
    4/1/1973 12:00:00 AM
  • Firstpage
    116
  • Lastpage
    125
  • Abstract
    The nonlinear properties of digital signal transfer through charge-coupled device and bucket-brigade shift registers are considered in terms of adjacent bit charge levels. A signal transfer efficiency is defined and shown to be a useful parameter for charge-transfer device shift register simulation. Approximate equations are developed for the worst case output bit levels and an approximate formula for the optimum input `fat´ zero level, with respect to the worst case output signal `window´, is obtained. The analysis includes only the intrinsic incomplete charge transfer properties of CTD´s under square-wave clock pulsing conditions. Comparison of the theory and preliminary experimental results for CCD indicate good quantitative agreement.
  • Keywords
    Digital signals; Field effect devices; Shift registers; Simulation; digital signals; field effect devices; shift registers; simulation; Bipolar transistors; Capacitive sensors; Charge coupled devices; Charge transfer; Dispersion; Electron devices; Interface states; Notice of Violation; Shift registers; Solid state circuits;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1973.1050360
  • Filename
    1050360