DocumentCode :
877758
Title :
Digital signal transfer in charge-transfer devices
Author :
Heller, L.G.
Volume :
8
Issue :
2
fYear :
1973
fDate :
4/1/1973 12:00:00 AM
Firstpage :
116
Lastpage :
125
Abstract :
The nonlinear properties of digital signal transfer through charge-coupled device and bucket-brigade shift registers are considered in terms of adjacent bit charge levels. A signal transfer efficiency is defined and shown to be a useful parameter for charge-transfer device shift register simulation. Approximate equations are developed for the worst case output bit levels and an approximate formula for the optimum input `fat´ zero level, with respect to the worst case output signal `window´, is obtained. The analysis includes only the intrinsic incomplete charge transfer properties of CTD´s under square-wave clock pulsing conditions. Comparison of the theory and preliminary experimental results for CCD indicate good quantitative agreement.
Keywords :
Digital signals; Field effect devices; Shift registers; Simulation; digital signals; field effect devices; shift registers; simulation; Bipolar transistors; Capacitive sensors; Charge coupled devices; Charge transfer; Dispersion; Electron devices; Interface states; Notice of Violation; Shift registers; Solid state circuits;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1973.1050360
Filename :
1050360
Link To Document :
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