• DocumentCode
    877769
  • Title

    Propagation mechanism and metallurgical characterization of first bond brittle heel cracks in AlSi wire

  • Author

    Fitzsimmons, Ray ; Chia, E. Henry

  • Author_Institution
    Raytheon Co., Sudbury, MA, USA
  • Volume
    15
  • Issue
    6
  • fYear
    1992
  • fDate
    12/1/1992 12:00:00 AM
  • Firstpage
    1081
  • Lastpage
    1085
  • Abstract
    Bottom die heel cracks in 1.25-mil Al-1%Si wires were found to cause opens and shorts, which were attributed to brittle-looking fatigue die heel breaks. This failure mechanism has found to be directly caused by the 60-kHz ultrasonic energy vibrating the wire behind the tool during the first bond. In order to increase the frequency of these brittle cracks, hard AlSi wire was deliberately produced for this work. The frequency of the bottom cracks increased from one in a thousand to eight out of ten wires, when normal wire (19-g tensile breaking force) was replaced with hard wire (35-g tensile breaking force). The wire bonding sequence was partitioned to determine the onset of the crack and its propagation. Results show that the ultrasonic vibration during first bond produces an incipient crack that further propagates during the remainder of the wire bond cycle. Full metallographic characterization of the wire, which included optical and scanning electron microscopy, was performed in order to investigate the matrix/particle involvement in the failed specimens. The possible fracture formation and propagation characteristics are described, and the specific contribution of the AlSi alloy system is discussed
  • Keywords
    aluminium alloys; brittle fracture; fatigue; lead bonding; silicon alloys; ultrasonic welding; vibrations; 1.25 mil; 60 kHz; AlSi alloy system; AlSi wire; bottom die heel cracks; brittle cracks; brittle heel cracks; crack propagation mechanism; failure mechanism; fatigue die heel breaks; first bond; fracture formation; incipient crack; matrix/particle involvement; metallographic characterization; metallurgical characterization; scanning electron microscopy; ultrasonic vibration; ultrasonic vibration fatigue; wire bond cycle; wire bonding sequence; Annealing; Bonding; Electrons; Fatigue; Frequency; Optical microscopy; Optical propagation; Semiconductor device reliability; Vibrations; Wire;
  • fLanguage
    English
  • Journal_Title
    Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0148-6411
  • Type

    jour

  • DOI
    10.1109/33.206934
  • Filename
    206934