DocumentCode
877776
Title
Temperature Effect on Heavy-Ion-Induced Single-Event Transient Propagation in CMOS Bulk 0.18 
m Inverter Chain
Author
Truyen, D. ; Boch, J. ; Sagnes, B. ; Vaillé, J.R. ; Renaud, N. ; Leduc, E. ; Briet, M. ; Heng, C. ; Mouton, S. ; Saigné, F.
Author_Institution
IES-UMR UM2/CNRS, Nantes
Volume
55
Issue
4
fYear
2008
Firstpage
2001
Lastpage
2006
Abstract
Heavy-ion-induced single-event transients (SET) are studied by device simulation on an ATMEL spatial component: the CMOS bulk 0.18 mum inverter. The wide temperature range of a spatial environment (from 218 to 418 K) can modify the shape of the SET. Thus, an investigation of the SET propagation through a 10-inverter logic chain is performed in the 218-418 K temperature range, and the threshold LET (LETth) required for unattenuated propagation through the inverter chain is determined. The LETth is calculated for two different locations of the heavy ion impact and for three temperature values. An increase of the sensitivity is found when the temperature is raised from 218 to 418 K.
Keywords
CMOS integrated circuits; invertors; radiation hardening (electronics); transients; ATMEL spatial component; CMOS bulk inverter chain; TCAD; heavy ion impact; heavy-ion-induced single-event transient propagation; size 0.18 mum; technology computer-aided design; temperature 218 K to 418 K; temperature dependence; temperature effect; unattenuated propagation; CMOS logic circuits; CMOS technology; Logic devices; Poisson equations; Pulse width modulation inverters; Shape; Space vector pulse width modulation; Temperature dependence; Temperature distribution; Temperature sensors; CMOS; LET; heavy ion; single event transient (SET); technology computer-aided design (TCAD) simulation; temperature dependence;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2008.2000851
Filename
4636906
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