Title :
Space-charge-limited insulated-gate surface-channel transistor (s.c.l. i.g.f.e.t.)
Author_Institution :
University of Birmingham, Department of Electronic & Electrical Engineering, Birmingham, UK
Abstract :
Preliminary experimental results are reported on insulated-gate field-effect transistors made in high-resistivity (near-intrinsic silicon substrates. Operation occurs under space-charge-limited conditions, and maximum transconductance and minimum parasitic capacitances for this kind of device are thus obtained. Some implications for integrated monolithic microelectronics are discussed.
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19680361