DocumentCode :
877789
Title :
Space-charge-limited insulated-gate surface-channel transistor (s.c.l. i.g.f.e.t.)
Author :
Wright, G.T.
Author_Institution :
University of Birmingham, Department of Electronic & Electrical Engineering, Birmingham, UK
Volume :
4
Issue :
21
fYear :
1968
Firstpage :
462
Lastpage :
464
Abstract :
Preliminary experimental results are reported on insulated-gate field-effect transistors made in high-resistivity (near-intrinsic silicon substrates. Operation occurs under space-charge-limited conditions, and maximum transconductance and minimum parasitic capacitances for this kind of device are thus obtained. Some implications for integrated monolithic microelectronics are discussed.
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19680361
Filename :
4210177
Link To Document :
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