DocumentCode :
877809
Title :
The second breakdown V-I characteristics in the triple diffused Si transistor
Author :
Agatsuma, T.
Volume :
53
Issue :
12
fYear :
1965
Firstpage :
2142
Lastpage :
2143
Keywords :
Anisotropic magnetoresistance; Electric breakdown; Frequency; Interference; Java; Laser beams; Laser modes; Optical surface waves; Oscillators; Phase measurement;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1965.4524
Filename :
1446454
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=877809
