Effect of Ion Energy on Charge Loss From Floating Gate Memories

Author

Cellere, Giorgio ; Paccagnella, Alessandro ; Visconti, Angelo ; Bonanomi, Mauro ; Beltrami, Silvia ; Harboe-Sørensen, Reno ; Virtanen, Ari

Author_Institution

Dipt. di Ing. dell´´Inf., Univ. di Padova, Padova

Volume

55

Issue

4

fYear

2008

Firstpage

2042

Lastpage

2047

Abstract

Heavy ions typical of the space environment have energies which exceed by orders of magnitude those available at particle accelerators. In this paper we are irradiating state of the art floating gate memories by using both a medium energy (SIRAD) and a high energy (RADEF) facilities. The corruption of stored information decreases when increasing ion energy. The proposed model deals with the broader track found for higher energy ions. Implications for testing procedures and for reliability considerations are discussed.

Keywords

flash memories; integrated circuit reliability; integrated circuit testing; ion beam effects; radiation hardening (electronics); random-access storage; charge loss; floating gate memories; heavy ion energy effect; high energy facilities; medium energy facilities; reliability considerations; space environment; stored information corruption; testing procedures; Cyclotrons; Flash memory; Ion accelerators; Ion beams; Linear particle accelerator; Nonvolatile memory; Radiation effects; Random access memory; Space technology; Testing; Floating gate memories; high-energy particles; single event upset;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2008.2000779

Filename

4636910