Title :
The realization of the effect of nonuniform distribution in semiconductor null networks
Author :
Toba, Yoshitomi ; Mano, Kunio
fDate :
4/1/1973 12:00:00 AM
Abstract :
Uniform and nonuniform distributed semiconductor devices suitable for null networks were experimentally fabricated and the effect of nonuniform distribution was observed. The temperature sensitivities were measured and compensating circuits are given. The devices are of wide application and suitable for integrated circuit fabrication.
Keywords :
Distributed parameter networks; Semiconductor devices; distributed parameter networks; semiconductor devices; Active filters; Circuits; Impurities; Physics; Semiconductor devices; Silicon; System testing; Temperature measurement; Temperature sensors; Threshold voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1973.1050369
