Title :
Fundamental microwave oscillations in epitaxial GaAs by control of space-charge growth
Author :
Taylor, B.C. ; Gibbs, S.E.
Author_Institution :
Royal Radar Establishment, Malvern, UK
Abstract :
Fundamental oscillations of up to 450mW pulsed output have been obtained from 10¿12.5 ¿m sandwich layers of GaAs in Q band (26¿40 GHz). The absence of lower frequencies (down to below the transit frequency) has been confirmed to a sensitivity of better than 40dB below the high-frequency output.
Keywords :
microwave devices; oscillators; semiconductor devices; space charge;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19680369
