• DocumentCode
    877849
  • Title

    Fundamental microwave oscillations in epitaxial GaAs by control of space-charge growth

  • Author

    Taylor, B.C. ; Gibbs, S.E.

  • Author_Institution
    Royal Radar Establishment, Malvern, UK
  • Volume
    4
  • Issue
    22
  • fYear
    1968
  • Firstpage
    471
  • Lastpage
    472
  • Abstract
    Fundamental oscillations of up to 450mW pulsed output have been obtained from 10¿12.5 ¿m sandwich layers of GaAs in Q band (26¿40 GHz). The absence of lower frequencies (down to below the transit frequency) has been confirmed to a sensitivity of better than 40dB below the high-frequency output.
  • Keywords
    microwave devices; oscillators; semiconductor devices; space charge;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19680369
  • Filename
    4210184
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=877849