Title :
N-channel ion-implanted enhancement/depletion MOSFET´s
fDate :
4/1/1973 12:00:00 AM
Abstract :
The fabrication and performance of n-channel ion-implanted, TTL compatible, enhancement/depletion MOSFET devices and circuits are described. A speed-power product of 10.0 pJ/pF has been experimentally observed.
Keywords :
Field effect transistors; Semiconductor device manufacture; Transistor-transistor logic; field effect transistors; semiconductor device manufacture; transistor-transistor logic; Adders; Fabrication; Filtering theory; Ion implantation; MOSFET circuits; Microwave filters; Microwave theory and techniques; Temperature distribution; Temperature sensors; Thin film circuits;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1973.1050370
