Temperature stabilized transistor amplifiers

A design procedure is evolved based on emitter-base voltage V/SUB EB/ and collector-base voltage V/SUB CB/ as stability parameters with the aim of achieving a gain stabilized transistor amplifier against temperature variations. Silicon transistors have been operated with a fairly stabilized gain in the temperature range from -15/spl deg/ to 270/spl deg/C. The voltage and power gains of this amplifier are found to be reasonably stable against unit to unit replacements. The circuits designed according to this approach are particularly suited for operation of long duration at elevated temperatures. The role of the leakage currents in affecting the operation of a several hour duration at elevated temperatures is investigated experimentally and it is found that the low I/SUB CB0/ units are better suited for such an operation. Further experimentations include the study of the gain stability characteristics of the amplifiers using Darlington pairs, CE-CE tandem connections, two stage RC-coupled amplifier, and the different amplifier.