• DocumentCode
    878078
  • Title

    Current Leakage Evolution in Partially Gate Ruptured Power MOSFETs

  • Author

    Scheick, Leif ; Edmonds, Larry ; Selva, Luis ; Chen, Yuan

  • Author_Institution
    Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA
  • Volume
    55
  • Issue
    4
  • fYear
    2008
  • Firstpage
    2366
  • Lastpage
    2375
  • Abstract
    It has been observed that power MOSFETs can experience an SEGR and continue to function with altered parameters. We propose that there are three different types of SEGR modes; the micro-break, the thermal runaway, and the avalanche breakdown. Data that demonstrates these stages of device failure are presented as well as a proposed model for the micro-break. Brief discussions of the other modes, based on analysis combined with our interpretations of the older literature, are also given.
  • Keywords
    avalanche breakdown; leakage currents; power MOSFET; semiconductor device breakdown; SEGR; avalanche breakdown; current leakage; gate ruptured power MOSFETs; microbreak mode; single-event gate rupture; thermal runaway; Avalanche breakdown; Degradation; Electric breakdown; Event detection; Leakage current; MOSFETs; Nanoscale devices; Space vehicles; Testing; Voltage; Avalanche breakdown; SEGR; power MOSFET; thermal runaway;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2008.2001008
  • Filename
    4636937
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=878078