DocumentCode :
878119
Title :
First Evaluation of Proton Irradiation Effects on InAs/InP Quantum Dash Laser Diodes Emitting at 1.55 
Author :
Boutillier, Mathieu ; Gauthier-Lafaye, Olivier ; Bonnefont, Sophie ; Lelarge, Francois ; Dagens, B. ; Make, D. ; Gouezigou, Odile Le ; Rousseau, B. ; Accard, A. ; Poingt, F. ; Pommereau, F. ; Lozes-Dupuy, Francois
Author_Institution :
Centre Nat. de la Rech. Sci., Univ. de Toulouse, Toulouse
Volume :
55
Issue :
4
fYear :
2008
Firstpage :
2243
Lastpage :
2247
Abstract :
Quantum dash lasers were irradiated for the first time, using 31-MeV protons. These novel structures, which show promising performances for 1.55 mum optical communications exhibit better robustness to radiation than quantum well lasers.
Keywords :
III-V semiconductors; indium compounds; proton effects; quantum dot lasers; InAs-InP; electron volt energy 31 MeV; optical communications; proton irradiation effects; quantum dash laser diodes; wavelength 1.55 mum; Diode lasers; Fiber lasers; Indium phosphide; Optical receivers; Protons; Quantum dot lasers; Quantum dots; Quantum well lasers; Robustness; Semiconductor lasers; Proton radiation effects; quantum dots; semiconductor lasers;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2008.2000848
Filename :
4636941
Link To Document :
