• DocumentCode
    878154
  • Title

    Ion Track Structure and Dynamics in SiO _{2}

  • Author

    Murat, M. ; Akkerman, A. ; Barak, J.

  • Author_Institution
    NRC, Yavne
  • Volume
    55
  • Issue
    4
  • fYear
    2008
  • Firstpage
    2113
  • Lastpage
    2120
  • Abstract
    Differential spatiotemporal distributions of the deposited energy around ion tracks in SiO2 are calculated using Monte Carlo simulations with input parameters extracted from the complex dielectric function theory. It is shown that the spatial and temporal dependences cannot be separated. The track evolution and the time to reach a given energy deposition are approximately calculated. The track radius is evaluated from the radial distribution of the deposited energy as a function of ion energy. Formation of a visible track due to lattice damage through ionization (latent track), as well as straggling in energy deposition are discussed.
  • Keywords
    Monte Carlo methods; dielectric function; ion beam effects; silicon compounds; Monte Carlo simulations; SiO2; complex dielectric function theory; differential spatiotemporal distributions; ion energy; ion track structure; lattice damage; Dielectrics; Helium; Insulation life; Ionization; Lattices; Mechanical factors; Spatiotemporal phenomena; Sputtering; Steady-state; Ultrafast electronics; Charge radial distribution; Monte Carlo simulation; microdose and straggling effects; time evolution of track structure;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2008.921937
  • Filename
    4636944