DocumentCode
878154
Title
Ion Track Structure and Dynamics in SiO
Author
Murat, M. ; Akkerman, A. ; Barak, J.
Author_Institution
NRC, Yavne
Volume
55
Issue
4
fYear
2008
Firstpage
2113
Lastpage
2120
Abstract
Differential spatiotemporal distributions of the deposited energy around ion tracks in SiO2 are calculated using Monte Carlo simulations with input parameters extracted from the complex dielectric function theory. It is shown that the spatial and temporal dependences cannot be separated. The track evolution and the time to reach a given energy deposition are approximately calculated. The track radius is evaluated from the radial distribution of the deposited energy as a function of ion energy. Formation of a visible track due to lattice damage through ionization (latent track), as well as straggling in energy deposition are discussed.
Keywords
Monte Carlo methods; dielectric function; ion beam effects; silicon compounds; Monte Carlo simulations; SiO2; complex dielectric function theory; differential spatiotemporal distributions; ion energy; ion track structure; lattice damage; Dielectrics; Helium; Insulation life; Ionization; Lattices; Mechanical factors; Spatiotemporal phenomena; Sputtering; Steady-state; Ultrafast electronics; Charge radial distribution; Monte Carlo simulation; microdose and straggling effects; time evolution of track structure;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2008.921937
Filename
4636944
Link To Document