Title :
Monolithic integration of InAs photodiode and GaAs MESFET
Author :
Dobbelaere, Wim ; De Raedt, W. ; De Boeck, Jo ; Mertens, Robert ; Borghs, G.
Author_Institution :
Interuniv. Micro-Electron. Center vzw, Leuven, Belgium
Abstract :
InAs pn diodes were grown in wells pre-etched in GaAs substrates. Despite the large lattice mismatch of 7.2% between GaAs and InAs, good photodiode characteristics were obtained with 77 K resistance area products of 70 Omega cm2 and a peak detectivity of 1.25*1011 cm square root (Hz)/W at 2.95 mu m wavelength. GaAs MESFETs were fabricated next to the embedded detectors demonstrating for the first time the feasibility of the monolithic integration of InAs photodiodes and GaAs electronic circuits.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; indium compounds; infrared detectors; integrated optoelectronics; photodiodes; 2.95 micron; InAs-GaAs; MESFETs; embedded detectors; lattice mismatch; monolithic integration; peak detectivity; photodiode characteristics; resistance area products;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920233
