Title :
Total Ionizing Dose and Single Event Effects Hardness Assurance Qualification Issues for Microelectronics
Author :
Shaneyfelt, Marty R. ; Schwank, James R. ; Dodd, Paul E. ; Felix, James A.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM
Abstract :
The radiation effects community has developed a number of hardness assurance test guidelines to assess and assure the radiation hardness of integrated circuits for use in space and/or high-energy particle accelerator applications. These include test guidelines for total dose hardness assurance qualification and single event effects (SEE) qualification. In this work, issues associated with these hardness assurance test guidelines are discussed. For total dose qualification, the main test methodologies used in the U.S. and Europe are reviewed and differences between the guidelines are discussed. In addition, some key issues that must be considered when performing total dose hardness assurance testing are addressed. Following these discussions we review some emerging issues relevant to SEE device qualification that are not covered in present SEE test guidelines. The hardness assurance implications of these issues are addressed.
Keywords :
integrated circuit reliability; integrated circuit testing; radiation hardening (electronics); hardness assurance qualification; hardness assurance test guidelines; microelectronics; single event effects; total dose qualification; total ionizing dose; Application specific integrated circuits; Circuit testing; Europe; Guidelines; Integrated circuit testing; Linear particle accelerator; Microelectronics; Performance evaluation; Qualifications; Radiation effects; Integrated circuit radiation effects; integrated circuit reliability; proton-induced single-event latchup; radiation effects; radiation hardening (electronics); radiation hardness assurance; radiation hardness assurance methodology; radiation hardness assurance testing; single event effects; single-event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2008.2001268