Channel Hot Carrier Stress on Irradiated 130-nm NMOSFETs

Author

Silvestri, Marco ; Gerardin, Simone ; Paccagnella, Alessandro ; Faccio, Federico ; Gonella, Laura

Author_Institution

Dipt. di Ing. dell´´Inf., Univ. di Padova, Padova

Volume

55

Issue

4

fYear

2008

Firstpage

1960

Lastpage

1967

Abstract

We investigate how X-ray exposure impact the long term reliability of 130-nm NMOSFETs as a function of device geometry and irradiation bias conditions. This work focuses on electrical stresses on n-channel MOSFETs performed after irradiation with X-ray up to 136 Mrad(SiO₂) in different bias conditions. Irradiation is shown to negatively affect the degradation during subsequent hot carrier injection. Increasing the bias during irradiation slightly reduces the impact on following electrical stress in core MOSFETs. Through device simulations, we attribute these effects to an enhanced impact ionization at the bulk-STI interfaces due to radiation-induced trapped charge and defects.

Keywords

MOS integrated circuits; MOSFET; X-ray effects; charge injection; hot carriers; isolation technology; semiconductor device reliability; silicon compounds; SiO₂; X-ray exposure; bulk-STI interfaces; channel hot carrier stress; defects; degradation; device geometry; electrical stresses; hot carrier injection; impact ionization; irradiated NMOSFETs; n-channel MOSFETs; radiation-induced trapped charge; reliability; shallow trench isolation; size 130 nm; CMOS technology; Degradation; Geometry; Helium; Hot carrier injection; Hot carriers; Impact ionization; Ionizing radiation; MOSFETs; Stress; 130 nm; CHC; CMOS; S-LHC; TID; hot carriers;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2008.2000771

Filename

4636947