Title :
A 24x6 interlaced-scan MOS image sensor
Author :
Horiuchi, S. ; Melen, R.D.
Abstract :
A new 24/spl times/6 self-scanned MOS image sensor has been developed for the Optacon reading aid for the blind. This new image sensor has a unique circuit design that provides in a simple manner interlaced row scanning and low-light level detection. While a previous investigation (1969) showed that self-scanned MOS image sensors are capable of operating with illumination levels of 1 /spl mu/W/cm/SUP 2/, this report presents a working circuit to simply realize this performance in a device compatible with a reading aid application. The previous investigation also did not consider the noise at high-scanning frequencies (175 kHz) associated with package interconnection capacitances. This new circuit attempts to minimize this previously neglected switching noise.
Keywords :
Electric sensing devices; Image convertors; Metal-insulator-semiconductor devices; Optoelectronic devices; electric sensing devices; image convertors; metal-insulator-semiconductor devices; optoelectronic devices; Acoustic sensors; Capacitance; Circuit synthesis; Image sensors; Instruments; Integrated circuit interconnections; Integrated circuit noise; Laboratories; Sensor arrays; Shift registers;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1973.1050399
