• DocumentCode
    878220
  • Title

    X-Band Diode Limiting (Correspondence)

  • Author

    Garver, R.V. ; Tseng, D.Y.

  • Volume
    9
  • Issue
    2
  • fYear
    1961
  • fDate
    3/1/1961 12:00:00 AM
  • Firstpage
    202
  • Lastpage
    202
  • Abstract
    Broad-band, matched, low power, instantaneous, passive, X--band diode limiting has been demonstrated. The limiter, which uses standard microwave components, is an outgrowth of point contact germanium diode microwave switch research. In fact, the hybrid-tee switch makes a very good narrow-band limiter under the condition of zero bias voltage on the crystals (biasing terminals short circuited). The output power under these conditions is limited to 0.5 mw² for incident power up to 30 mw, deduced from Fig. 9 of Garver, et al. However, the bandwidth of the hybrid-tee switch when used as a limiter is insufficient for many applications such as limiting the amplitude of a 0.2-µsec magnetron pulse or flattening a frequency-modulated klystron mode.
  • Keywords
    Bandwidth; Contacts; Crystals; Diodes; Germanium; Narrowband; Power generation; Switches; Switching circuits; Zero voltage switching;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IRE Transactions on
  • Publisher
    ieee
  • ISSN
    0097-2002
  • Type

    jour

  • DOI
    10.1109/TMTT.1961.1125303
  • Filename
    1125303