DocumentCode
878228
Title
Improving Integrated Circuit Performance Through the Application of Hardness-by-Design Methodology
Author
Lacoe, Ronald C.
Author_Institution
Aerosp. Corp., Los Angeles, CA
Volume
55
Issue
4
fYear
2008
Firstpage
1903
Lastpage
1925
Abstract
Increased space system performance is enabled by access to high-performance, low-power radiation-hardened microelectronic components. While high performance can be achieved using commercial CMOS foundries, it is necessary to mitigate radiation effects. This paper describes approaches to fabricating radiation-hardened components at commercial CMOS foundries by the application of novel design techniques at the transistor level, the cell level, and at the system level. This approach is referred to as hardness-by-design. In addition, trends in the intrinsic radiation hardness of commercial CMOS processes will be discussed.
Keywords
CMOS integrated circuits; integrated circuit design; radiation hardening (electronics); commercial CMOS processes; hardness-by-design methodology; integrated circuit performance; intrinsic radiation hardness; low-power radiation-hardened microelectronic components; space system performance; Application specific integrated circuits; CMOS technology; Foundries; Integrated circuit technology; Microelectronics; Microprocessors; Radiation hardening; Signal processing; Space technology; Throughput; Hardness-by-design (HBD); multibit upsets; single-event latchup; single-event transient; single-event upset; total-ionizing dose radiation;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2008.2000480
Filename
4636952
Link To Document