DocumentCode :
878228
Title :
Improving Integrated Circuit Performance Through the Application of Hardness-by-Design Methodology
Author :
Lacoe, Ronald C.
Author_Institution :
Aerosp. Corp., Los Angeles, CA
Volume :
55
Issue :
4
fYear :
2008
Firstpage :
1903
Lastpage :
1925
Abstract :
Increased space system performance is enabled by access to high-performance, low-power radiation-hardened microelectronic components. While high performance can be achieved using commercial CMOS foundries, it is necessary to mitigate radiation effects. This paper describes approaches to fabricating radiation-hardened components at commercial CMOS foundries by the application of novel design techniques at the transistor level, the cell level, and at the system level. This approach is referred to as hardness-by-design. In addition, trends in the intrinsic radiation hardness of commercial CMOS processes will be discussed.
Keywords :
CMOS integrated circuits; integrated circuit design; radiation hardening (electronics); commercial CMOS processes; hardness-by-design methodology; integrated circuit performance; intrinsic radiation hardness; low-power radiation-hardened microelectronic components; space system performance; Application specific integrated circuits; CMOS technology; Foundries; Integrated circuit technology; Microelectronics; Microprocessors; Radiation hardening; Signal processing; Space technology; Throughput; Hardness-by-design (HBD); multibit upsets; single-event latchup; single-event transient; single-event upset; total-ionizing dose radiation;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2008.2000480
Filename :
4636952
Link To Document :
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