• DocumentCode
    878228
  • Title

    Improving Integrated Circuit Performance Through the Application of Hardness-by-Design Methodology

  • Author

    Lacoe, Ronald C.

  • Author_Institution
    Aerosp. Corp., Los Angeles, CA
  • Volume
    55
  • Issue
    4
  • fYear
    2008
  • Firstpage
    1903
  • Lastpage
    1925
  • Abstract
    Increased space system performance is enabled by access to high-performance, low-power radiation-hardened microelectronic components. While high performance can be achieved using commercial CMOS foundries, it is necessary to mitigate radiation effects. This paper describes approaches to fabricating radiation-hardened components at commercial CMOS foundries by the application of novel design techniques at the transistor level, the cell level, and at the system level. This approach is referred to as hardness-by-design. In addition, trends in the intrinsic radiation hardness of commercial CMOS processes will be discussed.
  • Keywords
    CMOS integrated circuits; integrated circuit design; radiation hardening (electronics); commercial CMOS processes; hardness-by-design methodology; integrated circuit performance; intrinsic radiation hardness; low-power radiation-hardened microelectronic components; space system performance; Application specific integrated circuits; CMOS technology; Foundries; Integrated circuit technology; Microelectronics; Microprocessors; Radiation hardening; Signal processing; Space technology; Throughput; Hardness-by-design (HBD); multibit upsets; single-event latchup; single-event transient; single-event upset; total-ionizing dose radiation;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2008.2000480
  • Filename
    4636952