• DocumentCode
    878237
  • Title

    Nano-Watt silicon-on-sapphire ADC using 2C-1C capacitor chain

  • Author

    Fu, Z. ; Weerakoon, P. ; Culurciello, E.

  • Author_Institution
    Dept. of Electr. Eng., Yale Univ., New Haven, CT, USA
  • Volume
    42
  • Issue
    6
  • fYear
    2006
  • fDate
    3/16/2006 12:00:00 AM
  • Firstpage
    341
  • Lastpage
    343
  • Abstract
    An analogue-to-digital converter (ADC) in a 0.5 μm silicon-on-sapphire CMOS technology is reported. This innovative ADC uses a 2C-1C capacitor chain and a switched capacitor comparator. The ADC is capable of sampling at 409 kS/s, consuming 900 nW at 1.1 V power supply and 1.35 μW at 1.5 V. It uses an active area of 300×700 μm2 and 640×1070 μm2 with pads.
  • Keywords
    CMOS integrated circuits; analogue-digital conversion; comparators (circuits); elemental semiconductors; low-power electronics; sapphire; silicon; silicon-on-insulator; switched capacitor networks; 0.5 micron; 1.1 V; 1.35 muW; 1.5 V; 2C-1C capacitor chain; 900 nW; CMOS technology; Si-Al2O3; analogue-to-digital converter; nano-watt ADC; silicon-on-sapphire; switched capacitor comparator;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20060109
  • Filename
    1610420
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=878237