Abstract :
This review paper covers modeling of single event transients (SETs) in bipolar linear circuits. The modeling effort starts with a detailed circuit model, in a program such as SPICE, constructed from a photomicrograph of the die, which is verified by simulating the electrical response of the model. A description of various approaches to generating the single event strike in a circuit element is then given. Next, validating and calibrating the output SET response for critical circuit transistors is discussed, using focused ions beams or lasers. The circuit model is validated with a heavy ion broadbeam to generate the output SET response in terms of SET peak amplitude versus full width half maximum pulse width. Finally, a system application is described and a ldquofailure raterdquo in space is calculated, based on the experimental heavy ion data, for a geostationary orbit using CREME96.
Keywords :
bipolar integrated circuits; bipolar transistor circuits; ion beam effects; laser beam effects; bipolar linear circuits; circuit model; critical circuit transistors; focused ions beams; heavy ion broadbeam; lasers; single event transients; Ion beams; Laser modes; Linear circuits; Operational amplifiers; Protons; Pulse circuits; Pulse width modulation; Pulse width modulation converters; Satellites; Voltage; Bipolar microcircuits; focused ion beams; heavy ions; lasers; modeling; single event transients;
