Title :
A 4K MOS dynamic random-access memory
Author :
Abbott, Robert A. ; Regitz, William M. ; Karp, Joel A.
Abstract :
Presents one version of a 4K dynamic MOS random-access memory utilizing a 3 device/bit cell with an area of less than 2 mil/SUP 2//b, which is fabricated using an n-channel silicon gate MOS technology. The chip requires only a single phase clock and internally generates the multiphase timing required. Other than the single high voltage clock, all inputs and the output are TTL compatible.
Keywords :
Digital integrated circuits; Random-access storage; Semiconductor storage systems; digital integrated circuits; random-access storage; semiconductor storage systems; Circuits; Clocks; Costs; Paper technology; Power generation economics; Random access memory; Read-write memory; Semiconductor memory; Silicon; Timing;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1973.1050406
