DocumentCode
878272
Title
CW room-temperature operation of Y-junction semiconductor ring lasers
Author
Hohimer, J.P. ; Craft, D.C. ; Hadley, G Ronald ; Vawter, G. Allen
Author_Institution
Sandia Nat. Labs., Albuquerque, NM, USA
Volume
28
Issue
4
fYear
1992
Firstpage
374
Lastpage
375
Abstract
CW room-temperature lasing in Y-junction semiconductor ring lasers with radii as small as 50 mu m is reported. The dependence of the threshold current density on device dimensions is examined for radii in the range 50-200 mu m and for waveguide widths of 2-8 mu m. From these quantum-well devices, approximately 1 mW of CW single-frequency Te-polarised lasing output is obtained.
Keywords
ring lasers; semiconductor junction lasers; semiconductor quantum wells; 2 to 8 micron; 50 to 200 micron; CW room-temperature lasing; CW single-frequency Te-polarised lasing output; Y-junction semiconductor ring lasers; device dimensions; quantum-well devices; threshold current density; waveguide widths;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920234
Filename
126373
Link To Document