Title :
CW room-temperature operation of Y-junction semiconductor ring lasers
Author :
Hohimer, J.P. ; Craft, D.C. ; Hadley, G Ronald ; Vawter, G. Allen
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
CW room-temperature lasing in Y-junction semiconductor ring lasers with radii as small as 50 mu m is reported. The dependence of the threshold current density on device dimensions is examined for radii in the range 50-200 mu m and for waveguide widths of 2-8 mu m. From these quantum-well devices, approximately 1 mW of CW single-frequency Te-polarised lasing output is obtained.
Keywords :
ring lasers; semiconductor junction lasers; semiconductor quantum wells; 2 to 8 micron; 50 to 200 micron; CW room-temperature lasing; CW single-frequency Te-polarised lasing output; Y-junction semiconductor ring lasers; device dimensions; quantum-well devices; threshold current density; waveguide widths;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920234
