DocumentCode
878286
Title
High-efficiency native-oxide-passivated high-index-contrast ridge waveguide lasers
Author
Liang, D. ; Wang, J. ; Hall, D.C.
Author_Institution
Dept. of Electr. Eng., Univ. of Notre Dame, IN, USA
Volume
42
Issue
6
fYear
2006
fDate
3/16/2006 12:00:00 AM
Firstpage
349
Lastpage
350
Abstract
A GaAs-based high-index-contrast ridge waveguide laser is fabricated using a self-aligned process of deep dry etching plus oxygen-enhanced wet thermal oxidation of low Al-content AlGaAs. Lasers operating at λ=813 nm (CW, 300 K) with external differential quantum efficiencies as high as 78% are demonstrated, indicating effective passivation of the directly-oxidised etched active region sidewall surface.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; oxidation; passivation; ridge waveguides; waveguide lasers; AlGaAs; GaAs; deep dry etching; high-efficiency native-oxide-passivation; high-index-contrast ridge waveguide laser; oxygen-enhanced wet thermal oxidation; quantum efficiency; self-aligned process;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20064090
Filename
1610425
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