Title :
Room-temperature optically-pumped GaSb quantum well based VCSEL monolithically grown on Si (100) substrate
Author :
Balakrishnan, G. ; Huang, S.H. ; Khoshakhlagh, A. ; Jallipalli, A. ; Rotella, P. ; Amtout, A. ; Krishna, S. ; Haines, C.P. ; Dawson, L.R. ; Huffaker, D.L.
Author_Institution :
Center for High Technol. Mater., Univ. of New Mexico, Albuquerque, NM, USA
fDate :
3/16/2006 12:00:00 AM
Abstract :
Monolithic vertical cavity surface emitting lasers (VCSELs) on Si are demonstrated. The GaSb multi-quantum well active region embedded in an Al(Ga)Sb half-wave cavity spacer layer enables lasing under room-temperature optically-pumped conditions. The 13% lattice mismatch is accommodated by a spontaneously formed 2-D array of 90° misfit dislocations at the AlSb/Si interface. This growth mode produces very low defect density (∼8×105/cm2) and relaxed materials growth (98%) without the use of a buffer layer. Presented are VCSEL lasing spectra, light-in against light-out curves along with defect density measurements performed by microscopy and etch-pit density. A threshold excitation density of Ith=0.1 mJ/cm2 and a multimode lasing spectrum peaked at 1.62 μm, results from a 3 mm pump-spot size.
Keywords :
III-V semiconductors; aluminium compounds; elemental semiconductors; gallium compounds; optical pumping; quantum well lasers; semiconductor growth; semiconductor quantum wells; silicon; spectra; surface emitting lasers; 1.62 micron; 3 mm; AlGaSb; AlSb-Si; GaSb; VCSEL based quantum wells; VCSEL lasing spectra; defect density; etch-pit density; excitation density; half-wave cavity spacer; lattice mismatch; misfit dislocations; monolithic vertical cavity surface emitting laser; multi-quantum well active region; multimode lasing spectrum; optical pumping;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20064286
