Total Dose Effects on Error Rates in Linear Bipolar Systems

Author

Buchner, Stephen ; McMorrow, Dale ; Bernard, Muriel ; Roche, Nicolas ; Dusseau, Laurent

Author_Institution

Goddard Space Flight Center, Perot Syst. Gov. Services, NASA, Greenbelt, MD

Volume

55

Issue

4

fYear

2008

Firstpage

2055

Lastpage

2062

Abstract

The shapes of single event transients in linear bipolar circuits are distorted by exposure to total ionizing dose radiation. Some transients become broader and others become narrower. Such distortions may affect the single event transient (SET) system error rates in a radiation environment. If the transients are broadened by total ionizing dose (TID) exposure, the error rate could increase during the course of a mission, a possibility that has implications for hardness assurance.

Keywords

bipolar integrated circuits; errors; operational amplifiers; radiation effects; radiation hardening (electronics); transients; SET; dose effect; error rate; hardness; linear bipolar circuit; operation amplifier; single event transient system; total ionizing dose radiation; Anisotropic magnetoresistance; Degradation; Error analysis; Integrated circuit reliability; Ionizing radiation; Operational amplifiers; Probes; Protons; Pulse measurements; Shape; Bipolar circuit; error rate; single event transient; total dose;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2008.916061

Filename

4636958