DocumentCode
878340
Title
InP Gunn devices for 400-425 GHz
Author
Eisele, H.
Author_Institution
Sch. of Electron. & Electr. Eng., Univ. of Leeds, UK
Volume
42
Issue
6
fYear
2006
fDate
3/16/2006 12:00:00 AM
Firstpage
358
Lastpage
359
Abstract
InP Gunn devices with two similar graded doping profiles were evaluated for third-harmonic power extraction above 400 GHz. The oscillators used the configuration of a WR-6 waveguide cavity for the InP Gunn device and a WR-2 dielectric-filled conical horn with the appropriate waveguide transition for power measurements with a quasi-optical absolute power meter. The best devices yielded output power levels of 45 μW at 409 GHz, 40 μW at 412 GHz and 40 μW at 422 GHz.
Keywords
Gunn devices; Gunn oscillators; III-V semiconductors; doping profiles; indium compounds; millimetre wave devices; waveguide transitions; 40 muW; 400 to 425 GHz; 45 muW; Gunn device; InP; dielectric-filled conical horn; doping profile; oscillator; power measurement; quasioptical absolute power meter; third-harmonic power extraction; waveguide cavity; waveguide transition;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20060218
Filename
1610431
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