Title :
Evaluation of Recent Technologies of Nonvolatile RAM
Author :
Nuns, Thierry ; Duzellier, Sophie ; Bertrand, Jean ; Hubert, Guillaume ; Pouget, Vincent ; Darracq, Frédéric ; David, Jean-Pierre ; Soonckindt, Sabine
Author_Institution :
DESP, ONERA, Toulouse
Abstract :
Two types of recent nonvolatile random access memories (NVRAM) were evaluated for radiation effects: total dose and single event upset and latch-up under heavy ions and protons. Complementary irradiation with a laser beam provides information on sensitive areas of the devices.
Keywords :
laser beam effects; proton effects; radiation hardening (electronics); random-access storage; NVRAM; heavy ion effects; laser beam irradiation; latch-up; nonvolatile random access memories; proton effects; radiation effects; single event upset; total dose irradiation; Crystalline materials; EPROM; Ferroelectric films; Laser beams; Manufacturing industries; Nonvolatile memory; PROM; Random access memory; Read-write memory; Space technology; Heavy ion; laser mapping; nonvolatile memories; single-event effect; total dose;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2008.920255
