• DocumentCode
    878408
  • Title

    A proposed p-n junction cathode

  • Author

    Geppert, D.V.

  • Volume
    54
  • Issue
    1
  • fYear
    1966
  • Firstpage
    61
  • Lastpage
    61
  • Keywords
    Cathodes; Doping; Electrons; Gallium arsenide; P-n junctions; Semiconductor diodes; Semiconductor thin films; Silicon; Surface treatment; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1966.4580
  • Filename
    1446510