DocumentCode
878593
Title
Ideality factor of extrinsic base surface recombination current in AlGaAs/GaAs heterojunction bipolar transistors
Author
Liu, Wenxin
Author_Institution
Stanford Univ., CA, USA
Volume
28
Issue
4
fYear
1992
Firstpage
379
Lastpage
380
Abstract
Various structures of npn AlGaAs/GaAs heterojunction bipolar transistor have been fabricated to examine the ideality factor for extrinsic base surface recombination. Comparison of the measured results indicates that the base surface recombination current increases exponentially with the base-emitter voltage with an ideality factor of 1, rather than 2. This finding agrees with a published theoretical analysis (see Tiwari et al., J. Appl. Phys., vol.64, p.5009, 1988).
Keywords
III-V semiconductors; aluminium compounds; electron-hole recombination; gallium arsenide; heterojunction bipolar transistors; AlGaAs-GaAs; base-emitter voltage; extrinsic base surface recombination current; heterojunction bipolar transistors; ideality factor;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920237
Filename
126376
Link To Document