• DocumentCode
    878706
  • Title

    A new insulated-gate silicon transistor

  • Author

    Tombs, N.C. ; Wegener, H.A.R. ; Newman, Robert

  • Volume
    54
  • Issue
    1
  • fYear
    1966
  • Firstpage
    87
  • Lastpage
    88
  • Keywords
    Capacitance; Dielectric breakdown; Dielectric materials; Dielectrics and electrical insulation; Doping; Fabrication; Impurities; Semiconductor materials; Silicon; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IEEE
  • Publisher
    ieee
  • ISSN
    0018-9219
  • Type

    jour

  • DOI
    10.1109/PROC.1966.4607
  • Filename
    1446537
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=878706