• DocumentCode
    878824
  • Title

    Thermal effects in modulated IMPATT oscillators

  • Author

    Weidmann, G. ; Thaler, H.J.

  • Author_Institution
    Technische Universitÿt Mÿnchen, Institut fÿr Technische Electronik, Mÿnchen, West Germany
  • Volume
    5
  • Issue
    5
  • fYear
    1969
  • Firstpage
    92
  • Lastpage
    94
  • Abstract
    The modulation sensitivity and the inherent a.m. percentage of IMPATT oscillators with internal current modulation were measured as a function of the modulation frequency in the range 10Hz-1 MHz. Although constant above 100kHz, both quantities were found to vary with the modulation frequency below 100kHz. Assuming thermal effects as the origin of these variations, the possible relative change of the modulation sensitivity was calculated to be about 20%, taking into account the temperature dependence of the ionisation coefficient and of the drift velocity. With Q factors ranging between 20 and 150, the modulation sensitivity varied between 3 and 0.3 MHz/mA, and the ratio of a.m. percentage and modulating current varied between 7 and 10% per mA.
  • Keywords
    IMPATT devices; microwave oscillators; semiconductor devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19690066
  • Filename
    4210286