DocumentCode :
878824
Title :
Thermal effects in modulated IMPATT oscillators
Author :
Weidmann, G. ; Thaler, H.J.
Author_Institution :
Technische Universitÿt Mÿnchen, Institut fÿr Technische Electronik, Mÿnchen, West Germany
Volume :
5
Issue :
5
fYear :
1969
Firstpage :
92
Lastpage :
94
Abstract :
The modulation sensitivity and the inherent a.m. percentage of IMPATT oscillators with internal current modulation were measured as a function of the modulation frequency in the range 10Hz-1 MHz. Although constant above 100kHz, both quantities were found to vary with the modulation frequency below 100kHz. Assuming thermal effects as the origin of these variations, the possible relative change of the modulation sensitivity was calculated to be about 20%, taking into account the temperature dependence of the ionisation coefficient and of the drift velocity. With Q factors ranging between 20 and 150, the modulation sensitivity varied between 3 and 0.3 MHz/mA, and the ratio of a.m. percentage and modulating current varied between 7 and 10% per mA.
Keywords :
IMPATT devices; microwave oscillators; semiconductor devices;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19690066
Filename :
4210286
Link To Document :
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