Title :
Summation of Gaussians for ion-implantation profile control
Author_Institution :
Services Electronics Research Laboratory, Baldock, UK
Abstract :
Conditions are given under which ions of a single energy produce doping profiles close to Gaussian. Methods of Gaussian summation are discussed. A computer program is described which selects optimum energies for fit to predetermined profiles. Energy-dose data are given for a uniform profile of various dopants in silicon.
Keywords :
semiconductor doping;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19690084
