DocumentCode :
878965
Title :
Observation of current instabilities in a dielectric-surface-loaded ntype GaAs bulk element
Author :
Kataoka, S. ; Tateno, H. ; Kawashima, Mitsumasa
Author_Institution :
Ministry of International Trade & Industry, Electrotechnical Laboratory, Tokyo, Japan
Volume :
5
Issue :
6
fYear :
1969
Firstpage :
114
Lastpage :
116
Abstract :
Experiments were performed to investigate the effect of dielectric surface loading on GaAs bulk element. Current instabilities through the element were observed with a sampling oscilloscope while a dielectric sheet moved along a GaAs element. It was found that travelling-domain-mode current oscillations are suppressed and disappear only when the whole length of GaAs surface is covered with the dielectric sheet.
Keywords :
Gunn devices; Gunn effect; III-V semiconductors; semiconductor materials;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19690087
Filename :
4210302
Link To Document :
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