Title :
Observation of current instabilities in a dielectric-surface-loaded ntype GaAs bulk element
Author :
Kataoka, S. ; Tateno, H. ; Kawashima, Mitsumasa
Author_Institution :
Ministry of International Trade & Industry, Electrotechnical Laboratory, Tokyo, Japan
Abstract :
Experiments were performed to investigate the effect of dielectric surface loading on GaAs bulk element. Current instabilities through the element were observed with a sampling oscilloscope while a dielectric sheet moved along a GaAs element. It was found that travelling-domain-mode current oscillations are suppressed and disappear only when the whole length of GaAs surface is covered with the dielectric sheet.
Keywords :
Gunn devices; Gunn effect; III-V semiconductors; semiconductor materials;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19690087