Title :
Multiquantum well strained-layer lasers with improved low frequency response and very low damping
Author :
Lester, L.F. ; O´Keefe, S.S. ; Schaff, W.J. ; Eastman, L.F.
Author_Institution :
Cornell Univ., Ithaca, NY, USA
Abstract :
Strained-layer In0.3Ga0.7As/GaAs multiquantum well lasers fabricated by chemically assisted ion beam etching have achieved a record 3 dB modulation bandwidth of 28 GHz. The low frequency rolloff and nonlinear gain coefficient have been improved substantially by employing a separate confinement heterostructure design that has a fast carrier capture time.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical modulation; semiconductor junction lasers; semiconductor quantum wells; sputter etching; 28 GHz; 3 dB modulation bandwidth; III-V semiconductors; In 0.3Ga 0.7As-GaAs; carrier capture time; chemically assisted ion beam etching; damping; low frequency response; low frequency rolloff; multiquantum well lasers; nonlinear gain coefficient; separate confinement heterostructure design; strained-layer lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920240
