DocumentCode :
879034
Title :
Defect analysis and yield degradation of integrated circuits
Author :
Gupta, Anil ; Porter, W.A. ; Lathrop, Jay W.
Volume :
9
Issue :
3
fYear :
1974
fDate :
6/1/1974 12:00:00 AM
Firstpage :
96
Lastpage :
102
Abstract :
Various attempts have been made to analyze the yield of integrated circuits in the presence of point defects. This paper analyzes the yield considering both radial and angular variation in the defect density. The effect of statistical variations in the average defect density from slice to slice is also included. Different types of defects which affect the yield are reviewed. The degradation in yield due to point defects, line defects, area defects, and defect clusters is considered in detail. A method of optimum chip placement is described, and the results of computer calculations showing yield as a function of chip size are given assuming different defect density distributions. The results are primarily applicable to large integrated circuit chips.
Keywords :
Monolithic integrated circuits; Semiconductor defects; Semiconductor device models; monolithic integrated circuits; semiconductor defects; semiconductor device models; Circuit faults; Degradation; Distributed computing; Economic forecasting; Fabrication; Integrated circuit yield; Large scale integration; Production; Silicon; Wiring;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.1974.1050475
Filename :
1050475
Link To Document :
بازگشت