DocumentCode
879034
Title
Defect analysis and yield degradation of integrated circuits
Author
Gupta, Anil ; Porter, W.A. ; Lathrop, Jay W.
Volume
9
Issue
3
fYear
1974
fDate
6/1/1974 12:00:00 AM
Firstpage
96
Lastpage
102
Abstract
Various attempts have been made to analyze the yield of integrated circuits in the presence of point defects. This paper analyzes the yield considering both radial and angular variation in the defect density. The effect of statistical variations in the average defect density from slice to slice is also included. Different types of defects which affect the yield are reviewed. The degradation in yield due to point defects, line defects, area defects, and defect clusters is considered in detail. A method of optimum chip placement is described, and the results of computer calculations showing yield as a function of chip size are given assuming different defect density distributions. The results are primarily applicable to large integrated circuit chips.
Keywords
Monolithic integrated circuits; Semiconductor defects; Semiconductor device models; monolithic integrated circuits; semiconductor defects; semiconductor device models; Circuit faults; Degradation; Distributed computing; Economic forecasting; Fabrication; Integrated circuit yield; Large scale integration; Production; Silicon; Wiring;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1974.1050475
Filename
1050475
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