• DocumentCode
    879034
  • Title

    Defect analysis and yield degradation of integrated circuits

  • Author

    Gupta, Anil ; Porter, W.A. ; Lathrop, Jay W.

  • Volume
    9
  • Issue
    3
  • fYear
    1974
  • fDate
    6/1/1974 12:00:00 AM
  • Firstpage
    96
  • Lastpage
    102
  • Abstract
    Various attempts have been made to analyze the yield of integrated circuits in the presence of point defects. This paper analyzes the yield considering both radial and angular variation in the defect density. The effect of statistical variations in the average defect density from slice to slice is also included. Different types of defects which affect the yield are reviewed. The degradation in yield due to point defects, line defects, area defects, and defect clusters is considered in detail. A method of optimum chip placement is described, and the results of computer calculations showing yield as a function of chip size are given assuming different defect density distributions. The results are primarily applicable to large integrated circuit chips.
  • Keywords
    Monolithic integrated circuits; Semiconductor defects; Semiconductor device models; monolithic integrated circuits; semiconductor defects; semiconductor device models; Circuit faults; Degradation; Distributed computing; Economic forecasting; Fabrication; Integrated circuit yield; Large scale integration; Production; Silicon; Wiring;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1974.1050475
  • Filename
    1050475