Application of silicon crystal orientation and anisotropic effects to the control of charge spreading in devices

Advantageous use of the silicon, diamond cubic crystal structure is described from the aspect of orientation-dependent etching. The use of this technology can affect device characteristics, device and circuit isolation, circuit element densities, and process control. Several laboratories have reported advantageous use of }100{ oriented silicon. This paper discusses the advantageous use of both {100} and {110} silicon orientations. In particular, the {110} technology is discussed from a high packing density aspect as applied to the processing and characteristics of silicon diode array targets with improved television blooming control.