Title :
High-quality dielectric suitable for use with amorphous semiconductors
Author :
Haden, C.R. ; Barrett, John Lee ; Stone, Jack L.
fDate :
6/1/1974 12:00:00 AM
Abstract :
Very-high-quality Al/SUB 2/O/SUB 3/ films have been grown by anodizing aluminum films in a bath of tartaric acid, buffered with NH/SUB 4/OH and diluted with propylene glycol. Several thousand films were evaluated to demonstrate high resistivities and breakdown voltages, as well as dielectric properties stable with respect to film thickness, frequency, and applied voltage. It is shown that an optimum solution, an optimum buffer, an optimum pH, and an optimum anodization time exist.
Keywords :
Aluminium compounds; Amorphous semiconductors; Electric breakdown of solids; Insulating thin films; aluminium compounds; amorphous semiconductors; electric breakdown of solids; insulating thin films; Aluminum; Amorphous semiconductors; Anti-freeze; Conductivity; Dielectric materials; Dielectrics and electrical insulation; Frequency; Leakage current; Semiconductor films; Solid state circuits;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1974.1050478
