DocumentCode
879122
Title
Nonvolatile CCD memory with MNOS storage capacitors
Author
Goser, K. ; Knauer, K.
Volume
9
Issue
3
fYear
1974
fDate
6/1/1974 12:00:00 AM
Firstpage
148
Lastpage
150
Abstract
The volatility of information stored in a charge-coupled device can be avoided by storing the information in metal-nitride-oxide-silicon capacitors added to a CCD. In the following, the function, layout, and measured results of test circuits are described, and different layouts of such memory circuits are discussed.
Keywords
Charge-coupled devices; Digital integrated circuits; Metal-insulator-semiconductor devices; Monolithic integrated circuits; Semiconductor storage devices; charge-coupled devices; digital integrated circuits; metal-insulator-semiconductor devices; monolithic integrated circuits; semiconductor storage devices; Capacitance; Charge coupled devices; Circuit testing; Conductivity; Dielectrics and electrical insulation; Electrodes; MOS capacitors; Magnetic devices; Nonvolatile memory; Threshold voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1974.1050482
Filename
1050482
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