Title :
Bulk damage caused by single protons in SDRAMs
Author :
Shindou, H. ; Kuboyama, S. ; Ikeda, N. ; Hirao, T. ; Matsuda, S.
Author_Institution :
Nat. Space Dev. Agency of Japan, Ibaraki, Japan
Abstract :
A new failure mode that is attributable to the bulk damage caused by single protons has been reported in 256-Mbit SDRAMs. The refresh rate required to retain memorized data was measured as a typical parameter to detect the effect. We performed the proton irradiation test and discussed results regarding the influence of this failure.
Keywords :
DRAM chips; integrated circuit reliability; proton effects; radiation hardening (electronics); space vehicle electronics; 256 Mbit; SDRAM; bulk damage; failure mode; incidence angle; proton irradiation test; refresh rate; single event upsets; single protons; total ionizing dose; Capacitors; DRAM chips; Degradation; Electrons; Integrated circuit measurements; Performance evaluation; Protons; Random access memory; SDRAM; Single event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2003.820727
