Computation of Self-Induced Magnetic Field Effects Including the Lorentz Force for Fast-Transient Phenomena in Integrated-Circuit Devices

Author

Schoenmaker, W. ; Quan Chen ; Galy, Ph

Author_Institution

Magwel NV, Leuven, Belgium

Volume

33

Issue

6

fYear

2014

fDate

Jun-14

Firstpage

893

Lastpage

902

Abstract

We present a full physical simulation picture of the electromagnetic phenomena combining electromagnetic (EM) fields and carrier transport in semiconductor devices (TCAD) in the transient regime. The simulation tool computes the EM fields in a self-consistent way and the resulting magnetic fields are incorporated in the computation of the current sources that get modified by the Lorentz force (LF).

Keywords

electromagnetic fields; electromagnetic forces; integrated circuits; magnetic field effects; semiconductor device models; thyristors; transient analysis; EM fields; Lorentz force; TCAD; carrier transport; current sources; electromagnetic fields; electromagnetic phenomena; fast-transient phenomena; integrated circuit devices; self-induced magnetic field effects; semiconductor devices; simulation tool; Current density; Equations; Lorentz covariance; Mathematical model; Metals; Transient analysis; Vectors; Electromagnetics; Lorentz force (LF); TCAD; Transient;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/TCAD.2014.2303050

Filename

6816115