DocumentCode :
879288
Title :
Mechanisms for radiation dose-rate sensitivity of bipolar transistors
Author :
Hjalmarson, Harold P. ; Pease, Ronald L. ; Witczak, Steven C. ; Shaneyfelt, Marty R. ; Schwank, James R. ; Edwards, Arthur H. ; Hembree, Charles E. ; Mattsson, Thomas R.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Volume :
50
Issue :
6
fYear :
2003
Firstpage :
1901
Lastpage :
1909
Abstract :
Mechanisms for enhanced low-dose-rate sensitivity are described. In these mechanisms, bimolecular reactions dominate the kinetics at high dose rates thereby causing a sub-linear dependence on total dose, and this leads to a dose-rate dependence. These bimolecular mechanisms include electron-hole recombination, hydrogen recapture at hydrogen source sites, and hydrogen dimerization to form hydrogen molecules. The essence of each of these mechanisms is the dominance of the bimolecular reactions over the radiolysis reaction at high dose rates. However, at low dose rates, the radiolysis reaction dominates leading to a maximum effect of the radiation.
Keywords :
bipolar transistors; electron-hole recombination; interface states; radiation hardening (electronics); radiolysis; bimolecular reactions; bipolar transistors; electron-hole recombination; enhanced low-dose-rate sensitivity; hydrogen dimerization; hydrogen recapture; hydrogen source sites; radiation dose-rate sensitivity; radiolysis reaction; sub-linear dependence; total dose; Associate members; Bipolar transistors; Charge carrier processes; Electron traps; Hydrogen; Kinetic theory; Laboratories; Protons; Space charge; Spontaneous emission;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2003.821803
Filename :
1263819
Link To Document :
بازگشت