DocumentCode :
879328
Title :
NIEL for heavy ions: an analytical approach
Author :
Messenger, Scott R. ; Burke, Edward A. ; Xapsos, Michael A. ; Summers, Geoffrey P. ; Walters, Robert J. ; Jun, Insoo ; Jordan, Thomas
Author_Institution :
SFA Inc., Largo, MD, USA
Volume :
50
Issue :
6
fYear :
2003
Firstpage :
1919
Lastpage :
1923
Abstract :
We describe an analytical model for calculating nonionizing energy loss (NIEL) for heavy ions based on screened Coulomb potentials in the nonrelativistic limit. The model applies to any incident ion on any target material where the Coulomb interaction is primarily responsible for atomic displacement. Results are compared with previous methods of extracting NIEL from Monte Carlo SRIM runs. Examples of NIEL calculations are given for incident ions having energies ranging from the threshold for atomic displacement to 1 GeV. The incident ions include H, He, B, Si, Fe, Xe, and Au. Example targets include Si, GaAs, InP, and SiC.
Keywords :
III-V semiconductors; Monte Carlo methods; elemental semiconductors; energy loss of particles; gallium arsenide; indium compounds; ion beam effects; radiation hardening (electronics); silicon; silicon compounds; wide band gap semiconductors; 1 GeV; Au; B; Fe; GaAs; H; He; InP; Monte Carlo SRIM runs; Si; SiC; Xe; heavy ions; nonionizing energy loss; nonrelativistic limit; screened Coulomb potentials; Analytical models; Energy loss; Gold; Helium; Iron; Laboratories; Monte Carlo methods; NASA; Protons; Silicon;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2003.820762
Filename :
1263821
Link To Document :
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