• DocumentCode
    879339
  • Title

    Proton nonionizing energy loss (NIEL) for device applications

  • Author

    Jun, Insoo ; Xapsos, Michael A. ; Messenger, Scott R. ; Burke, Edward A. ; Walters, Robert J. ; Summers, Geoff P. ; Jordan, Thomas

  • Author_Institution
    Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
  • Volume
    50
  • Issue
    6
  • fYear
    2003
  • Firstpage
    1924
  • Lastpage
    1928
  • Abstract
    The proton-induced nonionizing energy loss (NIEL) for representative device materials are presented for the energy range between the displacement damage threshold to 1 GeV. All interaction mechanisms (Coulomb and nuclear elastic/nonelastic) are fully accounted for in the present NIEL calculations. For Coulomb interactions, the Ziegler-Biersack-Littmark (ZBL) screened potential was used in the lower energy range (<50 MeV) and the relativistic formulation was used in the higher energy range (≥50 MeV). A charged particle transport code, MCNPX, was used to compute the NIEL due to nuclear interactions.
  • Keywords
    energy loss of particles; potential energy functions; proton effects; radiation hardening (electronics); 1 GeV; 50 MeV; Coulomb interactions; MCNPX; Ziegler-Biersack-Littmark screened potential; charged particle transport code; device applications; displacement damage threshold; nuclear interactions; proton nonionizing energy loss; Atomic layer deposition; Energy loss; Gallium arsenide; Laboratories; NASA; Optical sensors; Propulsion; Protons; Semiconductor devices; Space technology;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2003.820760
  • Filename
    1263822