DocumentCode :
879339
Title :
Proton nonionizing energy loss (NIEL) for device applications
Author :
Jun, Insoo ; Xapsos, Michael A. ; Messenger, Scott R. ; Burke, Edward A. ; Walters, Robert J. ; Summers, Geoff P. ; Jordan, Thomas
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Volume :
50
Issue :
6
fYear :
2003
Firstpage :
1924
Lastpage :
1928
Abstract :
The proton-induced nonionizing energy loss (NIEL) for representative device materials are presented for the energy range between the displacement damage threshold to 1 GeV. All interaction mechanisms (Coulomb and nuclear elastic/nonelastic) are fully accounted for in the present NIEL calculations. For Coulomb interactions, the Ziegler-Biersack-Littmark (ZBL) screened potential was used in the lower energy range (<50 MeV) and the relativistic formulation was used in the higher energy range (≥50 MeV). A charged particle transport code, MCNPX, was used to compute the NIEL due to nuclear interactions.
Keywords :
energy loss of particles; potential energy functions; proton effects; radiation hardening (electronics); 1 GeV; 50 MeV; Coulomb interactions; MCNPX; Ziegler-Biersack-Littmark screened potential; charged particle transport code; device applications; displacement damage threshold; nuclear interactions; proton nonionizing energy loss; Atomic layer deposition; Energy loss; Gallium arsenide; Laboratories; NASA; Optical sensors; Propulsion; Protons; Semiconductor devices; Space technology;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2003.820760
Filename :
1263822
Link To Document :
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