Contactless ultra-fast laser probing of radiation-induced leakage current in ultra-thin oxides

Author

Pasternak, R. ; Chatterjee, A. ; Shirokaya, Y.V. ; Choi, B.K. ; Marka, Z. ; Miller, J.K. ; Albridge, R.G. ; Rashkeev, S.N. ; Pantelides, S.T. ; Schrimpf, R.D. ; Fleetwood, D.M. ; Tolk, N.H.

Author_Institution

Dept. of Phys. & Astron., Vanderbilt Univ., Nashville, TN, USA

Volume

50

Issue

6

fYear

2003

Firstpage

1929

Lastpage

1933

Abstract

Radiation induced leakage current in a variable-thickness SiO₂-on-Si structure (1.0-6.5 nm) is detected and characterized by a novel technique, time-dependent electric field-induced second-harmonic generation (EFISH). The role of second-harmonic generation (SHG) for in situ monitoring of the DC field across the oxide and its utility in understanding the dynamics of the carriers in response to their photo-injection is discussed. Plausible mechanisms responsible for radiation-induced leakage current through thin oxides are used to explain the experimental results.

Keywords

X-ray effects; elemental semiconductors; insulating thin films; laser beam effects; leakage currents; optical harmonic generation; semiconductor-insulator boundaries; silicon; silicon compounds; silicon-on-insulator; 1.0 to 6.5 nm; SiO₂-Si; X-ray effects; carrier dynamics; contactless ultra-fast laser probing; photo-injection; radiation-induced leakage current; time-dependent electric field-induced second-harmonic generation; ultra-thin oxides; Current measurement; Dielectric measurements; Electric variables measurement; Extraterrestrial measurements; Leakage current; Monitoring; Nonlinear optics; Optical films; Optical harmonic generation; Tunneling;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2003.821387

Filename

1263823